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This paper describes a simple, yet rigorous technique for fast and accurate determination of the source reflection coefficient during the characterization of microwave active devices. The solution consists in measuring the waves at the DUT reference plane under two different bias conditions. Since the DUT small signal impedance value depends on the bias voltage, the waves at the DUT input port changes as well. We proved that their measurements give enough information to compute the source reflection coefficient with accuracy suitable for most applications. The correction for systematic errors is based in the traditional error-box model and it does not require any exotic calibration procedures. Experimental results are presented and compared to data obtained with more traditional technique